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SGP40N60UF
IGBT
SGP40N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Features
* High speed switching * Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A * High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
GCE
TO-220
TC = 25C unless otherwise noted
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds
@ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C
SGP40N60UF 600 20 40 20 160 160 64 -55 to +150 -55 to +150 300
Units V V A A A W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 0.77 62.5 Units C/W C/W
(c)2002 Fairchild Semiconductor Corporation
SGP40N60UF Rev. A1
SGP40N60UF
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V IC = 40A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1430 170 50 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------15 30 65 50 160 200 360 30 37 110 144 310 430 740 97 20 25 7.5 --130 150 --600 --200 250 --1200 150 30 40 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH
VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 25C
VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 125C
VCE = 300 V, IC = 20A, VGE = 15V Measured 5mm from PKG
(c)2002 Fairchild Semiconductor Corporation
SGP40N60UF Rev. A1
SGP40N60UF
160 Common Emitter T C = 25 120 12V 20V 15V
80 70 Common Emitter VGE = 15V TC = 25 TC = 125
Collector Current, I C [A]
8
Collector Current, I C [A]
60 50 40 30 20 10
80
V GE = 10V
40
0 0 2 4 6
0 0.5 1 10
Collector - Emitter Voltage, V CE [V]
Collector - Emitter Voltage, V CE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4
30 Common Emitter V GE = 15V 25
V CC = 300V Load Current : peak of square wave
Collector - Emitter Voltage, VCE [V]
3
40A
Load Current [A]
20
2
20A
15
IC = 10A 1
10
5
Duty cycle : 50% TC = 100 Power Dissipation = 32W 0.1 1 10 100 1000
0 0 30 60 90 120 150
0
Case Temperature, TC []
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25
20 Common Emitter T C = 125
Collector - Emitter Voltage, VCE [V]
16
Collector - Emitter Voltage, VCE [V]
16
12
12
8
8
40A 4 IC = 10A 0 0 4 8 12 16 20 20A
40A 4 IC = 10A 0 0 4 8 12 16 20 20A
Gate - Emitter Voltage, V GE [V]
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
SGP40N60UF Rev. A1
SGP40N60UF
2500 Common Emitter V GE = 0V, f = 1MHz T C = 25
300 Common Emitter VCC = 300V, VGE = 15V IC = 20A TC = 25 TC = 125
2000
Ton Tr
Capacitance [pF]
1500
1000 Coes 500 Cres
0 1 10 30
Switching Time [ns]
Cies
100
10 1 10 100 200
Collector - Emitter Voltage, V CE [V]
Gate Resistance, RG [ ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
1000
Switching Time [ns]
Common Emitter VCC = 300V, VGE = 15V IC = 20A TC = 25 TC = 125
2000 Common Emitter V CC = 300V, V GE = 15V IC = 20A T C = 25 T C = 125
Toff
1000
Tf
Switching Loss [uJ]
Eon Eoff Eon Eoff
100
Tf
100
20 1 10 100 200
50 1 10 100 200
Gate Resistance, R G [ ]
Gate Resistance, R G []
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200
1000
100
Switching Time [ns]
Switching Time [nS]
Common Emitter VCC = 300V, V GE = 15V RG = 10 TC = 25 TC = 125 Toff Tf Toff
Ton Common Emitter V CC = 300V, V GE = 15V RG = 10 T C = 25 T C = 125 15 20 25 30 35 40
100
Tr
Tf
10 10
20 10 15 20 25 30 35 40
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
SGP40N60UF Rev. A1
SGP40N60UF
3000
15 Common Emitter RL = 15 TC = 25
Gate - Emitter Voltage, VGE [ V ]
1000
12
Switching Loss [uJ]
9 300 V 6 V CC = 100 V 3 200 V
Eoff Eon 100 Eoff Eon Common Emitter V CC = 300V, VGE = 15V RG = 10 T C = 25 T C = 125 15 20 25 30 35 40
10 10
0 0 30 60 90 120
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500 IC MAX. (Pulsed) 100
500
100 100us 1
Collector Current, I C [A]
IC MAX. (Continuous) 10 DC Operation 1 Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 0.3 1 10
Collector Current, IC [A]
50us
10
1
Safe Operating Area VGE =20V, T C=100 C 100 1000 0.1 1 10 100 1000
o
0.1
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1 0.5
Thermal Response, Zthjc [/W]
0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
1E-3 10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2002 Fairchild Semiconductor Corporation SGP40N60UF Rev. A1
SGP40N60UF
Package Dimension
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation SGP40N60UF Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM
MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM
SLIENT SWITCHER(R) SMART STARTTM SPMTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM
UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. H5

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